PART |
Description |
Maker |
X9279TB X9279TBI X9279TB-2.7 |
Single Digitally-Controlled (XDCP) Potentiometer 单数字控制(数字电位器)电位 IC,FLASH MEMORY,64 MB,120NS,3.0V,48 TSOP AM29DL800 FLASH MEM 8MB 70NS TSOP-48
|
Xicor Inc.
|
AT25DF02109 AT25DF021-SH-B AT25DF021-SH-T AT25DF02 |
IC FLASH MEM 2MB SPI SER 8UDFN 2M X 1 SPI BUS SERIAL EEPROM, DSO8 2-Megabit 2.3-volt or 2.7-volt Minimum SPI Serial Flash Memory
|
Atmel, Corp. http:// 聚兴科技股份有限公司 ATMEL Corporation
|
AT49F8011-70CI AT49F8011-90CI AT49F8011T-90CC AT49 |
ATS-SSK 0525/110 Quadruple 2-Input Positive-NAND Gate 14-SO -40 to 85 Quadruple 2-Input Positive-NAND Gate 14-SOIC -40 to 125 Quadruple 2-Input Positive-NAND Gate 14-TSSOP -40 to 125 8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PBGA48 8-megabit (512K x 16/ 1M x 8) 5-volt Only Flash Memory 512K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
Atmel Corp. Atmel, Corp.
|
H27U518S2CTR-BC H27U518S2C |
512 Mbit (64 M x 8 bit) NAND Flash 512 Mb NAND Flash
|
Hynix Semiconductor
|
K9F4008W0A K9F4008W0A- K9F4008W0A-TCB0 K9F4008W0A- |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512K x 8 bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY27UF081G2A HY27UF161G2A-TPCS HY27UF161G2A-TPCB |
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 64M X 16 FLASH 3.3V PROM, 25000 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
|
HY27UA081G1M HY27SA1G1M HY27SA161G1M-TPCB |
(HY27SAxxx) 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory 64M X 16 FLASH 1.8V PROM, 12000 ns, PDSO48
|
Hynix Semiconductor Inc.
|
K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory 32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
TC58DVM72A1FTI |
Flash - NAND
|
TOSHIBA
|
TC58DVM82A1FTI |
Flash - NAND
|
TOSHIBA
|
TC58DVM82A1XBJ1 |
Flash - NAND
|
TOSHIBA
|
MT29F1G16ABCHC MT29F1G08ABCH4 |
NAND Flash Memory
|
Micron Technology
|